Integrated circuit and method of forming the integrated circuit with improved logic transistor performance and sram transistor yield

ABSTRACT

In an integrated circuit that includes an NMOS logic transistor, an NMOS SRAM transistor, and a resistor, the gate of the SRAM transistor is doped at the same time that the resistor is doped, thereby allowing the gate of the logic transistor to be separately doped without requiring any additional masking steps.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to integrated circuits and, moreparticularly, to an integrated circuit and a method of forming theintegrated circuit with improved logic transistor performance and SRAMtransistor yield.

2. Description of the Related Art

A system on a chip (SoC) is an integrated circuit that includes all ofthe elements required by an electronic device. A SoC often includes NMOSlogic transistors, NMOS static random access memory (SRAM) transistors,and a number of resistors. The logic and SRAM transistors have gateswhich are commonly implemented with polycrystalline silicon(polysilicon). The resistors are also commonly implemented withpolysilicon.

The fabrication of integrated circuits includes the formation andsubsequent removal of a number of patterned photoresist layers. Theformation and removal of patterned photoresist layers is a relativelyexpensive process. As a result, it is desirable to use the minimumpossible number of patterned photoresist layers to reduce thefabrication costs.

One approach to minimize the number of patterned photoresist layers thatmust be used during the fabrication of a SoC is to form a patternedphotoresist layer, and then simultaneously implant an n-type dopant intothe regions of a polysilicon layer that will function as the logic gatesand the SRAM gates.

A separate patterned photoresist layer is used to implant an n-typedopant into the regions of the polysilicon layer that will function asthe resistors, which have a different dopant concentration than thelogic and SRAM gates, to meet sheet resistance and temperaturecoefficient of resistance (TCR) targets.

One drawback to simultaneously implanting an n-type dopant into theregions of a polysilicon layer that will function as the logic gates andthe SRAM gates is that the optimal dopant concentration for the logicgates is substantially different from the optimal dopant concentrationfor the SRAM gates.

The performance of the NMOS logic transistors improves with higherdopant concentrations, while higher dopant concentrations reduce theyield of the NMOS SRAM transistors. (Higher dopant concentrations in thelogic gates reduce the effective gate dielectric thickness at inversion,which improves performance. However, higher dopant concentrations alsolead to SRAM transistor cross diffusion where the n-type dopants fromthe n-type gate regions diffuse over into p-type gate regions. Thediffusing n-type dopants reduce the effective p-type dopantconcentrations in the p-type gate regions which, in turn, causesthreshold voltage shifts and thereby a lower SRAM yield.) Conversely,the performance of the NMOS logic transistors degrades with lower dopantconcentrations, while lower dopant concentrations improve the yield ofthe NMOS SRAM transistors.

Thus, the dose of the n-type dopant used to simultaneously implant theNMOS logic and SRAM transistor gates is commonly selected to be acomprise value that is less than the optimal dopant concentration forthe logic gates and more than the optimal dopant concentration for theSRAM gates.

SUMMARY OF THE INVENTION

The present invention provides an integrated circuit with improved logictransistor performance and memory transistor yield. An integratedcircuit of the present invention includes a substrate that has a firstconductivity type, a logic region, and a memory region. The integratedcircuit also includes a trench isolation structure that touches thesubstrate. The integrated circuit further includes a logic transistorthat has a logic gate dielectric that touches and lies over the logicregion of the substrate, and a logic gate that touches and lies over thelogic gate dielectric. The logic gate has a dopant concentration. Theintegrated circuit additionally includes a memory transistor that has amemory gate dielectric that touches and lies over the memory region ofthe substrate, and a memory gate that touches and lies over the memorygate dielectric. The memory gate has a dopant concentration. Theintegrated circuit also includes a resistor that touches and lies overthe trench isolation structure. The resistor has a dopant concentrationthat is substantially equal to the dopant concentration of the memorygate and substantially less than the dopant concentration of the logicgate.

The present invention also provides a method of forming an integratedcircuit with improved logic transistor performance and memory transistoryield. The method of the present invention includes implanting an n-typedopant into a logic transistor region of a polycrystalline silicon(polysilicon) layer. The logic transistor region has a dopantconcentration. The method also includes simultaneously implanting ann-type dopant into a memory transistor region and a resistor region ofthe polysilicon layer. The memory transistor region has a dopantconcentration. The resistor region has a dopant concentration that issubstantially equal to the dopant concentration of the memory transistorregion and substantially less than the dopant concentration of the logictransistor region.

A better understanding of the features and advantages of the presentinvention will be obtained by reference to the following detaileddescription and accompanying drawings which set forth an illustrativeembodiment in which the principals of the invention are utilized.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating an example of anintegrated circuit 100 in accordance with the present invention.

FIGS. 2A-2H are cross-sectional views illustrating an example of amethod 200 of forming an integrated circuit in accordance with thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 1 shows a cross-sectional view that illustrates an example of anintegrated circuit 100 in accordance with the present invention. Asdescribed in greater detail below, in an integrated circuit thatincludes logic transistors, SRAM transistors, and resistors, the presentinvention improves the performance of the logic transistors while at thesame time improving the yield of the SRAM transistors.

As shown in FIG. 1, semiconductor structure 100 includes a p-typesingle-crystal-silicon substrate region 110, and a trench isolationstructure 112 that touches substrate region 110. In addition,semiconductor structure 100 includes an NMOS logic transistor 114, anNMOS SRAM transistor 116, and a polycrystalline silicon (polysilicon)resistor 118.

NMOS logic transistor 114 includes an n-type source 120 and an n-typedrain 122 that each touch p-type substrate region 110. Source 120includes a lighter-doped region 120L, and a heavier-doped region 120H.Similarly, drain 122 includes a lighter-doped region 122L, and aheavier-doped region 122H. Further, substrate region 110 has a channelregion 124 that lies between source 120 and drain 122.

NMOS logic transistor 114 also includes a gate dielectric 126 thattouches and lies over channel region 124, and a polysilicon gate 130that touches gate dielectric 126 and lies over channel region 124. NMOSlogic transistor 114 additionally includes a sidewall spacer 132 thattouches and laterally surrounds gate dielectric 126 and polysilicon gate130. NMOS logic transistor 114 further includes a gate silicidestructure 134 that touches and lies over gate 130, a source silicidestructure 136 that touches and lies over source 120, and a drainsilicide structure 138 that touches and lies over drain 122.

As further shown in FIG. 1, NMOS SRAM transistor 116 includes an n-typesource 140 and an n-type drain 142 that each touch p-type substrateregion 110. Source 140 includes a lighter-doped region 140L, and aheavier-doped region 140H. Similarly, drain 142 includes a lighter-dopedregion 142L, and a heavier-doped region 142H. Further, substrate region110 has a channel region 144 that lies between source 140 and drain 142.

NMOS SRAM transistor 116 also includes a gate dielectric 146 thattouches and lies over channel region 144, and a polysilicon gate 150that touches gate dielectric 146 and lies over channel region 144. NMOSSRAM transistor 116 additionally includes a sidewall spacer 152 thattouches and laterally surrounds gate dielectric 146 and polysilicon gate150.

NMOS logic transistor 116 further includes a gate silicide structure 154that touches and lies over gate 150, a source silicide structure 156that touches and lies over source 140, and a drain silicide structure158 that touches and lies over drain 142. In addition, a sidewall spacer160 touches and laterally surrounds resistor 118.

In accordance with the present invention, polysilicon resistor 118 andpolysilicon gate 150 of NMOS SRAM transistor 116 have substantiallyequal n-type dopant concentrations. In addition, polysilicon gate 130 ofNMOS logic transistor 114 has an n-type dopant concentration that issubstantially greater than the n-type dopant concentrations ofpolysilicon resistor 118 and polysilicon gate 150.

NMOS logic transistor 114, NMOS SRAM transistor 116, and resistor 118operate in a conventional fashion, except that raising the n-type dopantconcentration of polysilicon gate 130 of NMOS logic transistor 114 whileat the same time lowering the n-type dopant concentration of polysilicongate 150 of NMOS SRAM transistor 116 improves the performance of theNMOS logic transistors and the yield of the NMOS SRAM transistors.

FIGS. 2A-2H show cross-sectional views that illustrate an example of amethod 200 of forming an integrated circuit in accordance with thepresent invention. As shown in FIG. 2A, method 200 utilizes apartially-completed conventionally-formed transistor structure 210 thatincludes a semiconductor body 212. Semiconductor body 212, in turn,includes a p-type single-crystal-silicon substrate region 214 and atrench isolation structure 216 that touches substrate region 214.

In addition, transistor structure 210 includes a logic gate dielectric220 that touches the top surface of substrate region 214, a SRAM gatedielectric 222 that touches the top surface of substrate region 214, anda polysilicon layer 224 that touches and lies over trench isolationstructure 216, logic gate dielectric 220, and SRAM gate dielectric 222.Polysilicon layer 224 includes a logic gate region 224L, a SRAM gateregion 224S, and a resistor region 224R, which are spaced apart fromeach other.

As further shown in FIG. 2A, method 200 begins by forming a patternedphotoresist layer 226 on polysilicon layer 224. Patterned photoresistlayer 226 is formed in conventional manner, which includes depositing alayer of photoresist, projecting a light through a patterned black/clearglass plate known as a mask to form a patterned image on the layer ofphotoresist to soften the photoresist regions exposed by the light, andremoving the softened photoresist regions.

After patterned photoresist layer 226 has been formed, logic gate region224L of polysilicon layer 224 is implanted with an n-type dopant.Following the implantation, patterned photoresist layer 226 is removedin a conventional manner. For example, patterned photoresist layer 226can be removed with a conventional ash process.

As shown in FIG. 2B, after patterned photoresist layer 226 has beenremoved, a patterned photoresist layer 230 is formed on polysiliconlayer 224 in conventional manner. After patterned photoresist layer 230has been formed, the SRAM gate region 224S and resistor region 224R ofpolysilicon layer 224 are simultaneously implanted with an n-typedopant.

As a result, the SRAM gate region 224S and resistor region 224R ofpolysilicon layer 224 have substantially the same dopant concentration.In the present example, the dopant concentration required by resistorregion 224R (to meet sheet resistance and temperature coefficient ofresistance (TCR) targets for a to-be-formed resistor) defines the dopantconcentration for SRAM gate region 224S.

In addition, the dopant concentrations of the SRAM gate region 224S andresistor region 224R of polysilicon layer 224 are substantially lessthan the dopant concentration of logic gate region 224L. Following theimplantation, patterned photoresist layer 230 is removed in aconventional manner.

As shown in FIG. 2C, after patterned photoresist layer 230 has beenremoved, a patterned photoresist layer 232 is formed on polysiliconlayer 224 in conventional manner. As shown in FIG. 2D, after patternedphotoresist layer 232 has been formed, the exposed regions ofpolysilicon layer 224 and the underlying regions of the gate dielectrics220 and 222 are etched in a conventional fashion to form a logic gate234 from the logic gate region 224L, a SRAM gate 236 from the SRAM gateregion 224S, and a resistor 238 from the resistor region 224R. Followingthe etch, patterned photoresist layer 232 is removed in a conventionalmanner.

As shown in FIG. 2E, once patterned photoresist layer 232 has beenremoved, an n-type dopant is implanted into the top surface of p-typesubstrate region 214 to form n-type lighter-doped logic source and drainregions 240 and 242 in substrate region 214, and n-type lighter-dopedSRAM source and drain regions 244 and 246 in substrate region 214. Inaddition, the implant increases the dopant concentrations of logic gate234, SRAM gate 236, and resistor 238 by an equal amount. Further, theimplant defines a channel region 248 of substrate region 214 that liesbetween source and drain regions 240 and 242, and a channel region 250of substrate region 214 that lies between source and drain regions 244and 246.

After the lighter-doped source and drain regions 240/244 and 242/246have been formed, a non-conductive layer is formed on logic gate 234,SRAM gate 236, and resistor 238 in a conventional manner. Non-conductivelayer 248 can be implemented with, for example, a layer of oxide.

As shown in FIG. 2F, after the non-conductive layer has been formed, thenon-conductive layer is anisotropically etched until the top surfaces oflogic gate 234, SRAM gate 236, and resistor 238 have been exposed. Theanisotropic etch forms a sidewall spacer 252 that touches and laterallysurrounds logic gate 234, a sidewall spacer 254 that touches andlaterally surrounds SRAM gate 236, and a sidewall spacer 256 thattouches and laterally surrounds resistor 238.

As shown in FIG. 2G, after the sidewall spacers 252, 254, and 256 havebeen formed, an n-type dopant is implanted into the top surface ofp-type substrate region 214 to form n-type heavier-doped logic sourceand drain regions 260 and 262 in substrate region 214, and n-typeheavier-doped SRAM source and drain regions 264 and 266 in substrateregion 214. In addition, the implant increases the dopant concentrationsof logic gate 234, SRAM gate 236, and resistor 238 by an equal amount.

As shown in FIG. 2H, after the heavier-doped regions 260/264 and 262/266have been formed, a patterned photoresist layer 268 is conventionallyformed to touch and cover resistor 238 and sidewall spacer 256.Following this, the top surfaces of logic gate 234, SRAM gate 236, andthe source and drain regions 260/264 and 262/266 are silicided in aconventional manner to form a silicide structure 270 on logic gate 234,a silicide structure 272 on SRAM gate 236, a silicide structure 276 onsource region 260, a silicide structure 278 on drain region 262, asilicide structure 280 on source region 264, and a silicide structure282 on drain region 266. Patterned photoresist layer 268 protects thetop surface of resistor 238 from silicidation. Following this, patternedphotoresist layer 268 is removed in a conventional fashion, and method200 continues with conventional steps.

Thus, in an integrated circuit that includes an NMOS logic transistor,an NMOS SRAM transistor, and a resistor, the present invention dopes thegate of the SRAM transistor at the same time that the resistor is dopedwhich, in turn, allows the gate of the logic transistor to be separatelydoped. As a result, the performance of the logic transistors and theyield of the SRAM transistors are improved without requiring anyadditional masking steps.

It should be understood that the above descriptions are examples of thepresent invention, and that various alternatives of the inventiondescribed herein may be employed in practicing the invention. Thus, itis intended that the following claims define the scope of the inventionand that structures and methods within the scope of these claims andtheir equivalents be covered thereby.

What is claimed is:
 1. An integrated circuit comprising: a substrateregion having a first conductivity type, a logic region, and a memoryregion; a trench isolation structure that touches the substrate region;a logic transistor having: a logic gate dielectric that touches and liesover the logic region of the substrate region; and a logic gate thattouches and lies over the logic gate dielectric, the logic gate having adopant concentration; a memory transistor having: a memory gatedielectric that touches and lies over the memory region of the substrateregion; and a memory gate that touches and lies over the memory gatedielectric, the memory gate having a dopant concentration; and aresistor that touches and lies over the trench isolation structure, theresistor having a dopant concentration that is substantially equal tothe dopant concentration of the memory gate and substantially less thanthe dopant concentration of the logic gate.
 2. The integrated circuit ofclaim 1 and further comprising: a silicide structure that touches thelogic gate; and a silicide structure that touches the memory gate. 3.The integrated circuit of claim 1 wherein the logic transistor furtherincludes: a logic source and drain of a second conductivity type thattouch the substrate region; and a logic channel region of the substrateregion that lies between the logic source and drain.
 4. The integratedcircuit of claim 3 wherein the logic gate dielectric touches and liesover the logic channel region.
 5. The integrated circuit of claim 3wherein the memory transistor further includes: a memory source anddrain of the second conductivity type that touch the substrate region;and a memory channel region of the substrate region that lies betweenthe memory source and drain.
 6. The integrated circuit of claim 5wherein the memory gate dielectric touches and lies over the memorychannel region.
 7. The integrated circuit of claim 5 and furthercomprising: a sidewall spacer that touches and laterally surrounds thelogic gate; a sidewall spacer that touches and laterally surrounds theSRAM gate; and a sidewall spacer that touches and laterally surroundsthe resistor.
 8. The integrated circuit of claim 7 wherein the logicsource includes a lighter doped region and a heavier doped region thattouches the lighter doped region.
 9. A method of forming an integratedcircuit comprising: implanting an n-type dopant into a logic transistorregion of a polycrystalline silicon (polysilicon) layer, the logictransistor region having a dopant concentration; and simultaneouslyimplanting an n-type dopant into a memory transistor region and aresistor region of the polysilicon layer, the memory transistor regionhaving a dopant concentration, the resistor region having a dopantconcentration that is substantially equal to the dopant concentration ofthe memory transistor region and substantially less than the dopantconcentration of the logic transistor region.
 10. The method of claim 9and further comprising etching the polysilicon layer to form a logicgate from the logic transistor region, a SRAM gate from the SRAMtransistor region, and a resistor from the resistor region.
 11. Themethod of claim 10 wherein: the logic gate touches and lies over a logicgate dielectric structure; the SRAM gate touches and lies over a SRAMgate dielectric; the resistor touches and lies over a trench isolationstructure; the logic gate dielectric touches and lies over a logicchannel region of a substrate region; the SRAM gate dielectric touchesand lies over a SRAM channel region of the substrate region; and thetrench isolation structure touches the substrate region.
 12. The methodof claim 11 and further comprising implanting an n-type dopant into thesubstrate region to form a lighter-doped logic source region, alighter-doped logic drain region, a lighter-doped SRAM source region,and a lighter-doped SRAM drain region.
 13. The method of claim 12wherein: the logic channel region lies between the lighter-doped logicsource region and the lighter-doped logic drain region, and directlybelow the logic gate; and the SRAM channel region lies between thelighter-doped SRAM source region and the lighter-doped SRAM drainregion, and directly below the SRAM gate.
 14. The method of claim 13 andfurther comprising: depositing a non-conductive layer that touches andlies over the logic gate, the SRAM gate, and the resistor; andanisotropically etching the non-conductive layer to expose the logicgate, the SRAM gate, and the resistor, and form a logic sidewall spacerthat touches and laterally surrounds the logic gate, a SRAM sidewallspacer that touches and laterally surrounds the SRAM gate, and aresistor sidewall spacer that touches and laterally surrounds theresistor.
 15. The method of claim 14 and further comprising implantingan n-type dopant into the substrate region to form a heavier-doped logicsource region that touches the lighter-doped logic source region, aheavier-doped logic drain region that touches the lighter-doped logicdrain region, a heavier-doped SRAM source region that touches thelighter-doped SRAM source region, and a heavier-doped SRAM drain regionthat touches the lighter-doped SRAM drain region.
 16. The method ofclaim 15 and further comprising siliciding the logic gate, the SRAMgate, the heavier-doped logic source region, the heavier-doped logicdrain region, heavier-doped SRAM source region, and the heavier-dopedSRAM drain region.